2–8GHz 50W GaN Solid State Power Amplifier Module 3U Rack Case SSPA for 5G, LTE, WIFI, and EMC Testing Applications

This 2–8GHz 50W GaN Solid State Power Amplifier Module embodies the cutting edge of RF power amplification technology. Built with advanced Gallium Nitride (GaN) semiconductor process, it delivers up to 50 watts of saturated output power across a broad frequency range, while maintaining exceptional gain flatness and linearity. Its high power density and efficiency make it particularly suitable for modern communication systems such as 5G, LTE, and WIFI, as well as demanding applications like EMC testing, radar, and electronic warfare.

The amplifier incorporates multiple protection features, including over-temperature, over-drive, and over-VSWR protection, ensuring reliable operation even under harsh conditions. The front panel LED indicators provide real-time status monitoring for temperature, fan, and amplifier alarms, enhancing usability and maintenance. Remote control and monitoring are facilitated via a D-Sub 9-pin connector, offering flexibility for system integration.

Technically, the module offers a typical gain of 48.5dB across 2–8GHz, harmonic suppression better than -25dBc, spurious suppression below -65dBc, and input VSWR under 2:1. The unit is cooled by a forced-air system and housed in a standard 3U 19-inch rack-mountable chassis, ensuring robust thermal management and easy installation.

Ideal for R&D labs, system integration, and field testing, this high-reliability GaN power amplifier module provides robust and stable RF signal amplification, making it a top choice for sectors such as telecommunications, defense, and aerospace.

Electrical specification