200W 10–13GHz GaN Solid State Power Amplifier Module

This is a high-power GaN amplifier module covering 10–13GHz with 200W saturated output and 53dB typical gain, ±1dB gain flatness and 50Ω matching. Powered by 28VDC, it has over-temperature & over-current protection with alarm signals. It adopts SMA female input and WR75 waveguide output for EMC testing and RF jamming.

Product Detail

This is an X-band high-power GaN solid state power amplifier (SSPA) module covering 10–13GHz with chip-and-wire packaging technology. It delivers typical 200W saturated output power, 53dB power gain and ultra-flat ±1dB gain response, matched to standard 50Ω input and output impedance.Supplied by +28VDC, it features 17A quiescent current, 28A dynamic current at 100W output and 30% power added efficiency. It achieves harmonic rejection ≤-50dBc at 100W and spurious suppression ≤-60dBc at saturation, and continuously withstands 10:1 full-phase load VSWR. Built-in over-temperature and over-current protection circuits with independent TTL alarm signals shut down the module at 85°C; over-current faults require power cycling to reset. It is equipped with SMA female RF input and WR75 (BJ120) square flat flange waveguide output, alongside a 9W4 mixed D-Sub connector for power and control. Measuring 180×160×32mm and weighing 2.0kg, it operates reliably from -20℃ to +50℃ for EMC testing, RF jamming and wideband measurement systems.

Parameter	Symbol	Min	Typ	Max	Units
Operating Frequency	BW	10000		13000	MHz
RF Output Power @PSAT	PSAT		200		Watt
Power Gain @PSAT	Gp		53		dB
Power Gain Flatness @PSAT	ΔGp		±1		dB
Input Return Loss	S11			-10	dB
Harmonics @100W	H		-50		dBc
Spurious Signals @PSAT	Spur		-60		dBc
In/Output Impedance	Impedance		50		Ω
Operating Voltage	VDC		28		Volt
Quiescent Current	IQ		17		Amp
Dynamic Current @100W	IDD		28		Amp
Power add efficiency	Eff		30		%

Absolute Maximum Rating

Parameter	Rating
Input RF drive level without damage	+10 dBm	Maximum
Load VSWR @ POUT =100W	10:1 @ all load phase & amplitude continuous
Thermal Overload	85°C ±5°C shutdown	Maximum

Environmental Specifications (Design to Meet)

Parameter	Minimum	Maximum	Units	Notes
Operating Temperature	-20	50	°C
Non-operating Temperature	-25	65	°C	Storage
Relative Humidity（non-condensing）		95	%

Mechanical Specifications

Parameter	Value	Units	Notes
Dimensions	180x160x32 [7.09x6.30x1.18]	mm [inch]	Maximum
Weight	2.0 [4.4]	kg [lbs]
RF Connectors Input	SMA, Female
RF Connectors Output	WR75(BJ120),FBP120 Square Flat Flange
DC Interface Connector	Hybrid, 9W4 Mixed Contact D-Sub, Male

DC INTERFACE CONNECTOR

Pin#	Description	Specifications
A1,A2	VDD	+28VDC
A3,A4	GND	Ground
1	ENABLE	Amplifier Enable: TTL Logic High (3.3V) (Internally Pulled-Low)
2	TEMP ALARM	Temperature Protection,LVTTL 0/+3.3V Output 0V:normal temperature +3.3V: the module temperature more than +85℃ When the module temperature is higher than +85℃，the module shuts down automatically；After the temperature returns below +65℃,the module will turn on automatically
3	CURRENT ALARM	Current Protection,LVTTL 0/+3.3V Output 0V：normal current +3.3V： over current When IDD＞33A，the module shuts down automatically；the module will not turn on automatically.Users need to repower the module
4	NC
5	GND	Ground