Ultra wideband 2-8GHz 50W RF Power Amplifier SSPA with High Linearity for 5G Testing
This 2-8GHz 50W solid-state power amplifier embodies the cutting edge of RF amplification technology. Built with advanced GaN design, it delivers outstanding power performance and linearity across a broad frequency range, with typical saturated output power of 48.5dBm and P1dB of 41dBm. Its high gain and flat response make it capable of handling a variety of signal types, including continuous wave, pulse, wide instantaneous bandwidth, and high-order modulated signals, making it ideal for modern communication and testing applications.
The amplifier is equipped with comprehensive protection features such as over-temperature, over-drive, and over-VSWR protection, ensuring reliable operation under challenging conditions. It also includes a fan alarm system and efficient thermal management supported by external air cooling, operable within a temperature range of -10℃ to +55℃.
Ideal for use in 5G systems, LTE networks, WIFI infrastructure, EMC testing, defense electronics, and radar systems, this high-power RF amplifier offers robust performance and high integration capability. With compact dimensions of 160x120x20mm and a weight of only 2kg, it is designed for easy integration into various setups. The unit features SMA female input and N-type female output connectors, along with D-Sub control interfaces for seamless connectivity.
Whether deployed in R&D labs or field applications, this 2-8GHz power amplifier provides reliable, high-efficiency performance, making it a essential component in advanced wireless communication and electronic testing environments.
2-8GHz 50W Solid State Power Amplifier
Product Description
This is a 2-8GHz, saturated power ≥46.5dBm high gain solid state power amplifier with state-of-art GaN design technology. lt has higher saturated output power while keeping higher P1dB and better linearity, and can adapt to a variety of different signal modes such as continuous wave, pulse, wide instantaneous bandwidth signal, high-order modulation signal and etc. It is designed for applications, such as 5G, LTE, WIFI, EMC testing and etc.
Electrical specification
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Working Frequency |
2-8GHz |
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|
Saturated Output Power |
dBm |
Typ./Min. |
48.5/46.5@ Pin=0dBm |
|
P1dB |
dBm |
Typ./Min. |
41/36 |
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Gain |
dB |
Typ./Min. |
48.5/46.5@ Pin=0dBm |
|
Gain Flatness |
dB |
Typ. |
±1.5@ Pin=0dBm |
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Small Signal Gain |
A |
Typ. |
60@ Pin=-30dBm |
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Small Signal Gain Flatness |
:1 |
Typ. |
±2.5@ Pin=-30dBm |
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Isolation@ Disable Status |
dB |
Typ. |
90 |
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Input Power |
dBm |
Typ. |
0 |
|
2nd Harmonic Suppression |
dBc |
Typ./Max. |
-25/-10@ Pout=46.5dBm |
|
3rd Harmonic Suppression |
dBc |
Typ./Max. |
-25/-15@ Pout=46.5dBm |
|
Spurious Suppression |
dBc |
Typ./Max. |
-70/-65@ Pout=46.5dBm |
|
Input VSWR |
:1 |
Typ./Max. |
1.5/2 |
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Switch time |
us |
Typ. |
2@ 1kHz TTL, Pin=0dBm |
|
Supply Voltage |
V |
Typ. |
28 |
|
Power Consumption |
W |
Typ./Max. |
500@ Pin=0dBm |
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Input Power |
Pin≤10dBm (Input RF level without damage) |
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|
Load VSWR |
VSWR≤3:1 (Pout=46.5dBm) |
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|
Supply Voltage |
Amplifier power off(Supply voltage≥32V or ≤24V ) |
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Supply current |
Amplifier power off (Supply current ≥ 40A) |
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Thermal Degradation |
75℃ |
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RF Input Connector |
TYPE SMA F |
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RF Output Connector |
TYPE N F |
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Power supply Connector |
D-Sub 7W2 M |
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Control Connector |
D-Sub 7W2 M |
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Dimension |
160x120x20mm (Tolerance +0.5) |
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Weight |
2kg |
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Surface treatment |
Natural conductive oxidation |
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Temperature indicator |
Working: -10℃~+55℃; Storage: -40℃~+75℃ |
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Heat Dissipation |
External air cooling (need to select corresponding heat dissipation conditions according to product temperature) |
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Environmental |
N/A |
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