Ultra Wideband 100W 400-6000MHz Solid State Power Amplifier Module with GaN Technology

The 400-6000MHz 100W Solid State Power Amplifier with GaN technology sets a new benchmark for broadband RF systems with cutting-edge GaN technology. Delivering 51dBm saturated output power and 47dBm P1dB compression point, it achieves exceptional linearity across ultra-wide bandwidth while maintaining +64dB small-signal gain. This enables distortion-free amplification of complex waveforms including CW, pulsed signals, wide instantaneous bandwidth signals, and high-order modulations (e.g., 256QAM), critical for next-generation communication integrity.

Technical Superiority: A distributed amplification topology with precision impedance matching ensures ±2.5dB gain flatness. Advanced thermal management (forced-air cooled) guarantees stable operation from -10℃ to +55℃, with 75℃ thermal derating protection. Superior harmonic suppression (-20dBc for 2nd harmonic, -70dBc spurious) and 1.5:1 input VSWR minimize system interference. Triple protection (over-current/thermal/VSWR≤3:1 tolerance) and 90dB isolation in disabled state enhance field reliability.

Deployment Scenarios: Essential for 5G base station testing, LTE/WiFi signal boosting, and EMC radiated immunity validation. Its ruggedized IP67-rated alloy enclosure (276×206.5×100mm, 6kg) survives harsh environments, ideal for military comms, EW systems, and mobile satellite platforms. Real-time monitoring via D-Sub interfaces (temperature: 10mV/℃; current: 100mV/A) enables predictive maintenance.

Verified Performance: Operating at 32VDC with 550W power consumption, it drives 0dBm input signals to full power via SMA-F (input) and N-type (output) connectors. Storage tolerance (-40℃~+75℃) complies with MIL-STD environmental robustness, while 6000g weight optimizes portable deployment.