Mil-Spec 100W 8-12GHz Power Amplifier Module with GaN Technology For Radar System
The ZDTECH® 8-12GHz 100W Power Amplifier Module is a mil-spec core component engineered for radar systems, leveraging cutting-edge GaN technology to deliver exceptional power handling in X/Ku bands. Operating across 8-12GHz with 100W (47dBm) saturated output and 55dB gain, it enhances radar detection range and signal resolution. The GaN technology ensures superior thermal stability, enabling cold-start operation at -32℃ and continuous performance up to +85℃, compliant with mil-spec MIL-STD-810H environmental standards.
Featuring an AB-class GaN HEMT architecture, the module achieves -65dBc ultra-low spurious levels and 12:1 pulse rise/fall time (0.2μs), ideal for agile frequency hopping in pulse-Doppler radar systems. With 3:1 load mismatch tolerance and 1.5:1 input/output VSWR, it maintains stability in complex EM environments. Integrated over-temperature/current protection and 2000-hour accelerated life testing (ALT) validate >100,000 hours MTBF, meeting mil-spec lifecycle reliability requirements.
This GaN technology PA overcomes frequency limitations of traditional LDMOS, maintaining >38% power-added efficiency (PAE) across 8-12GHz – significantly reducing power consumption for radar systems. The compact metal housing (110×65×24mm) with SMA-F interfaces enables rapid integration into mil-spec platforms including AESA radar TR modules and ECM pods. Critical applications encompass airborne early-warning radar, naval fire-control radar systems, and ground-based surveillance radar, delivering GaN technology-powered next-gen RF frontends for defense and aerospace.
Performance highlights:
--Frequency response: ±0.5dB flatness over 8-12GHz
--Thermal management: AlSiC substrate + microchannel cooling
--Power supply: +28VDC single source (military power compatible)
--Ruggedization: IP67 rating, salt spray/fungus resistant
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Working frequency |
8-12GHz |
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Output power |
47 max. (user must take care not to exceed 47dBm CW) dBm |
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Input power |
0 typ. +5 max.dBm |
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Input and output VSWR |
-12 typ. -10 max.For 50W output power Maximum level |
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Gain |
55 typ. dB |
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Input / Output VSWR |
Input 1.5:1 typ. 2:1 max. |
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Output 1.5:1 typ. 2:1 max. |
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Load mismatch |
3:1 max. |
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Time for RF on/off (blanking) |
0.2 typ. 1 max.(10-90% RF rise / fall time) |
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Spurious |
-65 max.dBc |
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Operating class |
AB on GaN devices |
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Supply voltage |
+25 min. +28 typ. +32 max.Vdc |
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Current consumption |
0.2 typ. 2.2 typ. 12 typ. 15 max. A |
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Operating temperature |
-32~+85℃(Low temperature can start normally) |
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Storage Temperature |
-46~90℃ |
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Relative Humidity(Non-condensing) |
95 % |
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Mass |
450g |
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Dimension |
110 x 65 x 24mm (Without Connectors) |
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RF connector |
SMA-Female: RF Input SMA-Female: RF Output |






