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Mil-Spec 100W 8-12GHz Power Amplifier Module with GaN Technology For Radar System
RF Module

Mil-Spec 100W 8-12GHz Power Amplifier Module with GaN Technology For Radar System

8-12GHz 100W Power Amplifier Module integrates GaN technology for mil-spec radar systems. Delivers 47dBm CW output, 55dB gain, and operates at -32℃~85℃ with 3:1 load mismatch tolerance. Ideal for EW and fire-control radar requiring rugged reliability.

    The ZDTECH® 8-12GHz 100W Power Amplifier Module is a mil-spec core component engineered for radar systems, leveraging cutting-edge GaN technology to deliver exceptional power handling in X/Ku bands. Operating across 8-12GHz with 100W (47dBm) saturated output and 55dB gain, it enhances radar detection range and signal resolution. The GaN technology ensures superior thermal stability, enabling cold-start operation at -32℃ and continuous performance up to +85℃, compliant with mil-spec MIL-STD-810H environmental standards.

    Featuring an AB-class GaN HEMT architecture, the module achieves -65dBc ultra-low spurious levels and 12:1 pulse rise/fall time (0.2μs), ideal for agile frequency hopping in pulse-Doppler radar systems. With 3:1 load mismatch tolerance and 1.5:1 input/output VSWR, it maintains stability in complex EM environments. Integrated over-temperature/current protection and 2000-hour accelerated life testing (ALT) validate >100,000 hours MTBF, meeting mil-spec lifecycle reliability requirements.

    This GaN technology PA overcomes frequency limitations of traditional LDMOS, maintaining >38% power-added efficiency (PAE) across 8-12GHz – significantly reducing power consumption for radar systems. The compact metal housing (110×65×24mm) with SMA-F interfaces enables rapid integration into mil-spec platforms including AESA radar TR modules and ECM pods. Critical applications encompass airborne early-warning radar, naval fire-control radar systems, and ground-based surveillance radar, delivering GaN technology-powered next-gen RF frontends for defense and aerospace.

    Performance highlights:

    --Frequency response: ±0.5dB flatness over 8-12GHz

    --Thermal management: AlSiC substrate + microchannel cooling

    --Power supply: +28VDC single source (military power compatible)

    --Ruggedization: IP67 rating, salt spray/fungus resistant

    Working frequency

    8-12GHz

    Output power

    47 max. (user must take care not to exceed 47dBm CW) dBm

    Input power

    0 typ. +5 max.dBm

    Input and output VSWR

    -12 typ. -10 max.For 50W output power Maximum level

    Gain

    55 typ. dB

    Input / Output VSWR

    Input 1.5:1 typ. 2:1 max.

    Output 1.5:1 typ. 2:1 max.

    Load mismatch

    3:1 max.

    Time for RF on/off (blanking)

    0.2 typ. 1 max.(10-90% RF rise / fall time)

    Spurious

    -65 max.dBc

    Operating class

    AB on GaN devices

    Supply voltage

    +25 min. +28 typ. +32 max.Vdc

    Current consumption

    0.2 typ. 2.2 typ. 12 typ. 15 max. A

    Operating temperature

    -32~+85℃(Low temperature can start normally)

    Storage Temperature

    -46~90℃

    Relative Humidity(Non-condensing)

    95 %

    Mass

    450g

    Dimension

    110 x 65 x 24mm (Without Connectors)

    RF connector

    SMA-Female: RF Input

    SMA-Female: RF Output

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