High Efficiency GaN 300W 6-18GHz CW High Power Amplifier Module

This 300W 6-18GHz GaN CW high-power amplifier is built with advanced GaN HEMT gallium nitride devices, focusing on high power output and high energy efficiency to provide a stable and reliable signal amplification solution for the professional RF field. Supporting continuous wave (CW) operation mode, it covers a wide frequency range of 6-18GHz, with an input power range of 0±1dBm and an output power of up to 55dBm. The input VSWR is as low as 1.5:1, which can effectively reduce signal reflection and ensure transmission stability. The interface configuration balances practicality and professionalism: it adopts an SMA-50K input interface, a WRD500D36 output interface, and is powered by a +28V DC power supply through the D-SUB 8W8 interface (A1-A4 are +28V power pins, A5-A8 are GND pins). The control function is realized via the DB9 interface, supporting TTL high-level enable startup and Bit high-level normal operation.

With strong environmental adaptability, the product operates in a wide temperature range of -25~+55℃, capable of coping with various complex application scenarios. To ensure long-term stable operation, it needs to be installed on a cold plate for contact heat dissipation, fully adapting to the heat dissipation requirements under high-power working conditions. Thanks to its excellent performance parameters and rigorous design process, this amplifier is widely used in communication systems, RF test and measurement, industrial control and other professional RF application scenarios, serving as a core device to improve signal transmission quality.