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300W 0.02-6GHz GaN CW High Power Amplifier Module
This module is a wide-band CW high-power amplifier module based on GaN HEMT technology, operating in 0.02-0.5GHz, 0.5-3GHz, and 3-6GHz bands with a total bandwidth of 5.98GHz, suitable for multi-scenario signal amplification. It delivers 55dBm (equivalent to 300W) output CW power, with an input power of 0±2dBm, efficiency over 25%, spurious level of 55dBc, and input VSWR of 1.5:1, ensuring stable and reliable performance.
The control logic adopts TTL standard, with Enable and Bit pins activated at high level. For power supply, the 0.5-3GHz and 3-6GHz bands support +28V DC, while the 0.02-0.5GHz band requires +36V DC, with pins A4-A6 designed as GND. Equipped with SMA-KFD50 input and N-KFD50 output connectors, pins 1-6 are NC with a concise layout.
Operating within -20~+55℃, the module requires contact heat dissipation via a cold plate. Integrating high power, wide band, and high efficiency, it is widely applied in communication systems, electronic test equipment, radar auxiliary devices, and other electronic systems with strict signal amplification requirements.
Electrical Specifications
|
GaN CW High Power Amplifier |
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|---|---|---|---|---|---|---|---|---|
|
Raw |
Parameter |
Value |
unit |
Comments |
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|
1 |
Frequency range |
0.02-0.5G,0.5-3G,3-6G |
GHz |
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|
2 |
Output Power |
55 |
dBm |
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|
3 |
Working Mode |
CW |
TTL |
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|
4 |
Spurious Level |
55 |
dBc |
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|
5 |
Input Power |
0±2 |
dBm |
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|
6 |
Efficiency |
>25 |
% |
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|
7 |
Input VSWR |
1.5:1 |
- |
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|
8 |
input Connector |
SMA-KFD50 |
- |
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|
9 |
Output Connector |
N-KFD50 |
- |
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|
10 |
Temp Range |
-20~+55 |
degree |
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|
11 |
Supply |
+28 |
V |
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