6-18GHz 100W GaN Ultra Wideband SSPA RF Power Amplifier Module

ZDTECH 6-18GHz 100W GaN wideband power amplifier adopts GaN chip-and-wire tech, delivering 100W saturated power, 50dB gain, ±1dB flatness and -60dBc spurious suppression. Powered by 28VDC, it has auto over-temperature & over-current protection with SMA/N RF ports, compact for EMC test and microwave measurement.

Product Detail

ZDTECH 6-18GHz 100W ultra-wideband GaN RF power amplifier adopts GaN chip-and-wire technology. It features typical 100W saturated output power, 50dB gain and ±1dB gain flatness across full band with -60dBc spurious suppression, 50-ohm matched input and output ports. Powered by 28VDC, it integrates automatic over-temperature and over-current protection circuits with alarm output under faults. Equipped with SMA female input, N-type female output and D-SUB control connector, the compact lightweight module operates stably from -20℃ to 50℃, widely deployed in EMC testing, microwave jamming and RF measurement systems.

1.Electrical Specifications (+28VDC, 25℃, Pin=0dBm , 50Ω)

Parameter	Symbol	Min	Typ	Max	Units
Operating Frequency	BW	6000		18000	MHz
RF Output Power @PSAT	PSAT		100		Watt
Power Gain @PSAT	Gp		50		dB
Power Gain Flatness @PSAT	ΔGp		±1		dB
Input Return Loss	S11			-10	dB
Harmonics @100W	H		-15		dBc
Spurious Signals @PSAT	Spur		-60		dBc
In/Output Impedance	Impedance		50		Ω
Operating Voltage	VDC		28		Volt
Quiescent Current	IQ		9		Amp
Dynamic Current @100W	IDD		20		Amp
Power add efficiency	Eff		20		%

2.Absolute Maximum Rating

Parameter	Rating
Input RF drive level without damage	+10 dBm	Maximum
Load VSWR @ POUT =100W	5:1 @ all load phase & amplitude continuous
Thermal Overload	85℃ ±5℃ shutdown	Maximum

3.Environmental Specifications (Design to Meet)

Parameter	Minimum	Typical	Maximum	Units	Notes
Operating Temperature	-20		50	℃
Non-operating Temperature	-25		65	℃	Storage
Relative Humidity（non-condensing）			95	%

4.Mechanical Specifications

Parameter	Value	Units	Notes
Dimensions	200x160x35 [7.87x6.30x1.38]	mm [inch]
Weight	1.5 [3.30]	kg [lbs]	Typ
RF Connectors Input	SMA-K, Female
RF Connectors Output	N-K, Female
DC Interface Connector	Hybrid, 7W2 Mixed Contact D-Sub, Male

5.ZD Interface Connector

Pin	Description	Specifications
A1	VDD	+28VDC
A2	GND	Ground
1	ENABLE	Amplifier Enable: TTL Logic High (+3.3V) (Internally Pulled-Low)
2	GND	Ground
3	TEMP ALARM	Analog voltage relative to Module’s Temperature @ 10 mV/℃ 750±20mV@25℃(typ)
4	CURRENT ALARM	Analog voltage relative to IDD @ 26mV per Ampere，1650mV@0A(typ)
5	NC