Wideband 2-8GHz 100W Solid State Power Amplifier Module SSPA with GaN Technology

This 2-8GHz Wideband Power Amplifier Module is a 100W solid-state amplifier solution engineered for high-performance RF systems. Leveraging Gallium Nitride (GaN) technology, it delivers ≥46.5dBm saturated output power (48.5dBm typ.) and 44dBm P1dB across 2-8GHz, addressing critical power density requirements in radar, communications, and electronic warfare. With 48.5dB high gain and ±1.5dB flatness, the module ensures signal integrity, while -25dBc harmonic suppression enhances spectral purity.

This broadband power amplifier module processes CW, pulsed, and complex modulated signals with wide instantaneous bandwidth. Integrated protection against VSWR (tolerates ≤3:1 loads), overheating (75℃ thermal derating), and overcurrent/voltage ensures reliability in harsh environments. The D-Sub 7W2 interface enables 28V DC operation with monitoring – temperature (10mV/℃) and current (100mV/A) sensors deliver precise feedback for system control.

Ideal for RF signal amplification in phased-array radar transmitters, satellite comms ground stations, and EMC test systems, the module achieves 2μs fast switching (1kHz TTL driven) for pulsed applications. Its -70dBc spurious suppression meets military standards, while ≤500W total power consumption suits embedded deployments.