100W 8-12GHz GaN Ultra-Wideband Power Amplifier Module

This 8000-12000MHz 100W GaN microwave PA module provides saturated output of 100~160W, minimum gain 50dB, ±1dB gain flatness, -50dBc harmonics and -60dBc spurs. Powered by 28VDC, it withstands 5:1 VSWR with built-in over-temperature & over-current protection, compact and lightweight for EMC and RF interference testing.

Product Detail

Model ZD-8000/12000M-100W is an octave-band GaN high-power microwave amplifier module covering 7800~12300MHz, manufactured with GaN chip-and-wire technology. It delivers saturated output power from 100W to 160W, minimum power gain of 50dB and ultra-flat ±1dB gain response, with input return loss ≤-10dB. At 100W output, harmonic rejection reaches -50dBc and spurious suppression hits -60dBc under saturation, with standard 50Ω input/output impedance matching.

Operated by +28VDC supply, it draws typical quiescent current of 8.1A and 15.5A dynamic current at 100W, offering 22%~30% power added efficiency. It continuously tolerates 5:1 full-phase load VSWR, featuring auto shutdown at 85℃±5℃ over-temperature and after 5-second over-current with TTL alarm pins. Compact at 160×120×25mm and weighing only 2kg, it equips SMA-female input, N-K female output and 7W2 hybrid D-Sub connector for power & control. Operating temperature ranges -20℃~50℃, widely applied in RF jamming, EMC compliance and microwave test & measurement systems.

1.Electrical Specifications (+28VDC, 25℃, Pin=0dBm , 50Ω)

Parameter	Symbol	Min	Typ	Max	Units
Operating Frequency	BW	7800		12300	MHz
RF Output Power @PSAT	PSAT	100		160	Watt
Power Gain @PSAT	Gp	50			dB
Power Gain Flatness @PSAT	ΔGp		±1		dB
Input Return Loss	S11			-10	dB
Harmonics @100W	H		-50		dBc
Spurious Signals @PSAT	Spur		-60		dBc
In/Output Impedance	Impedance		50		Ω
Operating Voltage	VDC		28		Volt
Quiescent Current	IQ		8.1		Amp
Dynamic Current @100W	IDD		15.5		Amp
Power add efficiency	Eff	22	30		%

2.Absolute Maximum Rating

Parameter	Rating
Input RF drive level without damage	+10 dBm	Maximum
Load VSWR @ POUT =100W	5:1 @ all load phase & amplitude continuous
Thermal Overload	85℃ ±5℃ shutdown	Maximum

3.Environmental Specifications (Design to Meet)

Parameter	Minimum	Typical	Maximum	Units	Notes
Operating Temperature	-20		50	℃
Non-operating Temperature	-25		65	℃	Storage
Relative Humidity（non-condensing）			95	%

4.Mechanical Specifications

Parameter	Value	Units	Notes
Dimensions	160x120x25 [6.30x4.72x0.98]	mm [inch]
Weight	2.0 [4.40]	kg [lbs]	Typ
RF Connectors Input	SMA, Female
RF Connectors Output	N-K, Female
DC Interface Connector	Hybrid, 7W2 Mixed Contact D-Sub, Male

5.ZD Interface Connector

Pin	Description	Specifications
A1	VDD	+28VDC
A2	GND	Ground
1	ENABLE	Amplifier Enable: TTL Logic High (+3.3V) (Internally Pulled-Low)
2	TEMP ALARM	Temperature Protection,LVTTL 0/+3.3V Output 0V:noraml tenperature +3.3V: the module temperature more than +85℃ When the module temperature is higher than +85℃，the module shuts down automatically；After the temperature returns below +65℃,the module will turn on automatically
3	CURRENT ALARM	Current Protection,LVTTL 0/+3.3V Output 0V：normal current +3.3V： over current When IDD＞20A，5s continued,the module shuts down automatically；the module will not turn on automatically.Users need to repower the module
4	NC
5	GND	Ground