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20-1000MHz 100W GaN Wideband RF Power Amplifier Module
RF Module

20-1000MHz 100W GaN Wideband RF Power Amplifier Module

ZDTECH 20-1000MHz 100W power amplifier module adopts GaN HEMT chip with 50dBm CW output power and over 30% efficiency. Input power is 0±1dBm with output flatness ≤2dB. It supports TTL enable, 28-32V DC supply, requires cold plate cooling and operates stably from -25℃ to +55℃.

    ZDTECH 20-1000MHz 100W power amplifier module adopts GaN HEMT devices for CW signal output with full-band 50dBm output power and efficiency over 30%. It accepts 0±1dBm input power, with output flatness within 2dB and input VSWR 1.5:1, fitted with N-K50 RF output and D-SUB control connector. Powered by 28-32V DC and enabled via high TTL level, it works from -25℃ to +55℃ and requires cold plate contact cooling, ideal for wideband RF test applications.

    20-1000MHz 100W Power Amplifier Module

      1.Specifications

      Frequency Range

      0.02G-1G

      Output Power

      50dBm

      Working Mode

      CW

      Connector

      D-SUB 7W2

      Input Power

      0±1dBm

      Efficiency

      >30%

      Flatness Output

      2dB

      Input VSWR

      1.5:1

      Output Connector

      N-K50

      Temp Range

      -25~+55℃

      Supply

      +28V

      微信图片_20260420123107_169_2

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