100W Wideband 2-3GHz Power Amplifier

ZDTECH 100W 2-3GHz GaN High Power Amplifier adopts GaN HEMT devices, supporting 8 frequency sub-bands. With 50dBm output power in CW mode, efficiency over 25% and 1dB output flatness, it features 1.5:1 input/output VSWR, 50dBc spurious level and +28V DC supply. Requiring cold plate contact heat dissipation, it operates at -30℃~+55℃, suitable for various RF application scenarios.

Product Detail

ZDTECH 100W 0.4-6GHz GaN High Power Amplifier is a high-performance RF amplification device built with advanced GaN HEMT devices, boasting core advantages of high power and high efficiency. Covering 8 sub-bands from 0.4-0.75G to 5.5-6G, it supports CW (Continuous Wave) operating mode, delivering stable output power of 50dBm and efficiency over 25% to reduce energy consumption effectively. With output flatness within 1dB, input/output VSWR of 1.5:1 (only input for 400-700MHz, 750-1300MHz) and spurious level as low as 50dBc, it ensures pure and stable signal transmission.

Powered by +28V DC supply, the device is equipped with an N-KFD50 output connector and requires cold plate contact heat dissipation to ensure operational stability. Operating within a temperature range of -30℃~+55℃, it adapts to complex environments. Additionally, it supports control logic of TTL high-level enable and high-level normal operation, making it widely applicable to various RF scenarios such as communications, radar, test and measurement, providing a reliable solution for high-power signal amplification needs.

Frequency Range		0.4-0.75G/0.75-1.3G/1.3-2G/2-3G/3-4G/4-5G/5-5.5G/ 5.5-6G
Output Power		50dBm
Working Mode		CW
Spurious Level		50dBc
Input Power		0±1dBm
Efficiency		>25%
Flatness Output		1dB
Input/Output VSWR		1.5:1(400-700MHz,750-1300MHz only Input)
Output Connector		N-KFD50
Temp Range		-30℃~+55℃
Supply		+28V