10.7‑11.7/11.8‑12.8GHz 50W Dual‑Channel PA With Signal Source

Product Introduction

This field‑validated 50 W GaN RF power‑amplifier module is purpose‑engineered for high‑frequency professional RF system integration. It covers two key frequency bands: 10.7‑11.7 GHz and 11.8‑12.8 GHz, delivering consistent 50 W RF output power alongside high gain and solid linear performance across its operating spectrum.

Built on mature gallium‑nitride semiconductor technology, the unit leverages GaN’s inherent advantages for microwave‑band applications. Its optimized thermal architecture incorporates well‑engineered heat‑dissipation structures to sustain stable output during continuous‑duty field operation.

Designed for real‑world system integration, the module supports external enable control and integrates multi‑fault protection circuits against over‑temperature and over‑current events. Protection mechanisms help avoid component burnout and reduce unplanned system downtime.

Proven suitable for satellite ground stations, microwave transmission hardware and diverse RF test‑measurement set‑ups, this amplifier serves as a reliable building block for both laboratory and on‑site high‑frequency microwave deployments.

Electrical Specifications

*If you would like to learn more about this 50W 10.7-11.7/11.8-12.8GHz PA, please feel free to let us know, and we will provide you with technical support soon within 24 hours!