100W 6-8GHz GaN SSPA Solid-State RF Power Amplifier Module

This 6000-8000MHz 100W GaN SSPA multi-octave high-power solid-state amplifier module adopts GaN chip-and-wire technology. It delivers saturated output power ≥100W, power gain ≥50dB and ±2dB gain flatness with input return loss ≤-10dB. Harmonics are controlled ≤-12dBc at 50W output, and spurious suppression reaches ≤-60dBc under saturation, with standard 50Ω input and output impedance matching.

It supports wide DC input of 24~32V (nominal 28V) and draws typical 8A current at 50W output. It continuously withstands 3:1 full-phase load VSWR at full 100W power, with triple protection against over-temperature, over-voltage and over-current, and auto shutdown at 85℃±5℃. The 7W2 hybrid D-Sub connector integrates power supply, TTL enable and RS485 remote communication. Equipped with SMA-F RF input and N-F output, it measures 170×94×26.5mm and weighs 1.5kg, operating from -30℃ to +55℃, widely applied to EMC testing, RF jamming simulation and microwave measurement systems.